Product Summary

The STD3NK80ZT4 is obtained through an extreme optimization of STs well established stripbased PowerMES layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Parametrics

STD3NK80ZT4 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 800V ; (2)Drain- gate Voltage (RGS = 20 kΩ): 800V ; (3)Gate-Source Voltage: ± 30 V ; (4)Drain Current (continuous) at Tc = 25℃: 2.5A; (5)Drain Current (continuous) at Tc = 100℃: 1.57 A ; (6)Drain Current (pulsed): 10 A ; (7)Total Dissipation at Tc = 25℃: 70W ; (8)Derating Factor: 0.56 W/℃; (9)Storage Temperature: -55 to 150℃ ; (10)Operating Junction Temperature: 55 to 150℃.

Features

STD3NK80ZT4 features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.

Diagrams

STD3NK80ZT4 Internal schematic diagram

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